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LOT 10 IRF610 N-Channel Power MOSFET 3.5A 200V 5425
| Seller: ambrociogonzalez ( 1936 ) End Time: 2008-07-21 14:07:41 GMT Bids: 1 Current Price: $0.01 Location: Zapata, Texas Time Left: 0 Seconds |  | | For More Details: Click here | WELCOME TO EGOTEK'S SHOP LOT 10 IRF610 N-Channel Mosfet |
Description This auction is for 10 New IRF610 N-Channel Mosfet. IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17442. Features • 3.3A, 200V • rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance
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Shipping PACKED SHIPPED AND INSURED $3.55 ON THIS ITEM, We will not ship outside USA, Items are shipped Monday through Friday. Personal checks and non-postal money orders must clear before shipping.
Terms of Sale TERMS: We need to receive your payment no later than 7 days after the auction ends. If you are unable to do this please don’t bid. If you are the high bidder and do not complete the auction, you will be left appropriate feedback. We leave feedback after is left for Us, If your unsatisfied with this transaction contact Us before leaving feedback and We will do Our best to make it right for you.
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If you have any questions Please feel free to email us at: ambrociogonzalez@hotmail.com | | | | | |